* Fast Switching
* Low ON Resistance(Rdson≤5.5Ω)
* Low Gate Charge (Typical Data:16nC)
* Low Reverse transfer capacitances(Typical:6.5pF)
* 100%.

Automotive、DC Motor Control and Class D Amplifier. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rat.

VDSS 900 CS3N90 A3H1-G, the silicon N-channel Enhanced ID 3 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 75 which reduce the conduction loss, improve switching RDS(ON)Typ 5 performance and enhance the avalanche .

CS3N90A3H

CS3N90A4H

CS3N90A4R

CS3N90A8

CS3N90FA9H

CS3N06AE-G

CS3N06AS-G

CS3N06AS1-G

CS3N120A0R-G

CS3N120A3R

CS3N120A4R

CS3N120A8R

CS3N120AHR