CS4N90A3HD-G mosfet equivalent, silicon n-channel power mosfet.
* Fast Switching
* Low ON Resistance(Rdson≤3Ω)
* Low Gate Charge (Typical Data:25.2nC)
* Low Reverse transfer capacitances(Typical:7.4pF)
* 100% Si.
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Symbol Parameter
Rating
VD.
VDSS
900
CS4N90 A3HD-G, the silicon N-channel Enhanced ID
4
VDMOSFETs, is obtained by the self-aligned planar Technology
PD(TC=25℃)
100
which reduce the conduction loss, improve switching
RDS(ON)Typ
2.6
performance and enhance the avalanc.
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