* Fast Switching
* Low ON Resistance(Rdson≤3Ω)
* Low Gate Charge (Typical Data:25.2nC)
* Low Reverse transfer capacitances(Typical:7.4pF)
* 100% Si.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VD.

VDSS 900 CS4N90F A9HD, the silicon N-channel Enhanced ID 4 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 35 which reduce the conduction loss, improve switching RDS(ON)Typ 2.6 performance and enhance the avalanche.

CS4N90A3HD-G

CS4N60

CS4N60A3HD

CS4N60A3R

CS4N60A3TDY

CS4N60A4HD

CS4N60A4R

CS4N60A4TDY

CS4N60A7HD

CS4N60A8HD

CS4N60ARRD

CS4N60F

CS4N60FA9HD