l Fast Switching l Low ON Resistance(Rdson≤2.2Ω) l Low Gate Charge (Typical Data:28.4nC) l Low Reverse transfer capacitances(Typical:4.7pF) l 100% Single Pulse avalanche.

Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID I.

CS6N80 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi.

CS6N80A0H

CS6N80A8

CS6N80ARH

CS6N80FA9

CS6N120A0R-G

CS6N120A8R-G

CS6N120AHR-G

CS6N120AKR-G

CS6N120FA9R-G

CS6N40A3R

CS6N40A4R

CS6N40FA9R

CS6N60