* Fast Switching
* ESD Improved Capability
* Low Gate Charge (Typical Data:28nC)
* Low Reverse transfer capacitances(Typical:17pF)
* 100% Single.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

CS7N65ARD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power.

CS7N65ARR

CS7N65A0D

CS7N65A0R

CS7N65A3R

CS7N65A3TDY

CS7N65A4R

CS7N65A4TDY

CS7N65A8HD

CS7N65A8R

CS7N65FA9D

CS7N65FA9R

CS7N65FA9TDY

CS7N60