l Fast Switching l Low ON Resistance(Rdson≤1.1Ω) l Low Gate Charge (Typical Data: 57.9nC) l Low Reverse transfer capacitances(Typical: 11.3pF) l 100% Single Pulse avalan.

PC power and Inverter. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt .

CS9N90 AKRD-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p.

CS9N90ANHD

CS9N90FA9D

CS9N90FA9RD

CS9N90FA9RD-G

CS9N20A3R

CS9N20A4R

CS9N20A8R

CS9N20FA9R

CS90-E2GA152MYNS

CS9000

CS9012

CS902-A-R

CS90N03A3