HGQ011N03A-G datasheet, mosfet equivalent, CR Micro

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datasheet Download (Size : 1.18MB)

Features and benefits

* Fast Switching
* Low ON Resistance
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test
* Halogen Fr.

Application

the package form is PDFN5*6, which accords with the RoHS standard. Features：
* Fast Switching
* Low ON Resistan.

Description

HGQ011N03A-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as A load swi.

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