HGQ022N03A mosfet equivalent, silicon n-channel power mosfet.
l Fast Switching l Low ON Resistance(Rdson≤2.2mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test
Applications：
Power sw.
The package
form is PDFN5*6, which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdso.
HGQ022N03A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is
VDSS ID (Silicon Limited) ID(Pa.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 516.26KB)