HGQ018N03A mosfet equivalent, silicon n-channel power mosfet.
* Fast Switching
* Low ON Resistance(Rdson≤1.8mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Tes.
The
package form is PDFN5*6, which accords with the RoHS standard.
Features：
* Fast Switching
* Low ON Resis.
HGQ018N03A, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trench technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. This device is
suitable for use as a load .
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