HGQ014N04B-G mosfet equivalent, silicon n-channel power mosfet.
* Fast Switching
* Low ON Resistance
* Low Gate Charge
* Low Reverse transfer capacitances
* 100% Single Pulse avalanche energy Test
* Halog.
The
package form is PDFN5×6-8L, which accords with the RoHS
standard.
Features：
* Fast Switching
* Low ON Re.
VDSS
40
V
HGQ014N04B-G, the silicon N-channel Enhanced
ID(Silicon Limited)
200
A
VDMOSFETs, is obtained by the high density Trench
ID(Package Limited)
100
A
technology which reduce the conduction loss, improve switching performance and e.
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