Description
The CT851 series consists of a high power transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package different lead forming options.
Switch mode power supplies
Computer peripheral interface
Microprocessor system inter
Features
- High isolation 5000 VRMS.
- CTR flexibility available see order information.
- DC input with transistor output.
- External Creepage ≥ 7.5mm (S/SL Type).
- External Creepage ≥ 8.0mm (SLM Type).
- Operating temperature range - 55 °C to 100 °C.
- Regulatory Approvals
UL - UL1577 (E364000) VDE - EN60747-5-5(VDE0884-5) CQC.
- GB4943.1, GB8898 IEC60065, IEC60950.
CT851 Datasheet
