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CT8124-T52 - N-Channel MOSFET

CT8124-T52 Description

CT8124-T52 N-Channel Enhancement MOSFET .
The CT8124. T52 uses high performance Trench Technology to provide excellent RDS(ON)and low gate charge which is suitable for most of the sync.

CT8124-T52 Features

* Drain-Source Breakdown Voltage VDSS = 20V
* Drain-Source On-Resistance RDS(ON) 23m, at VGS= 4.5V, ID= 5.0A RDS(ON) 27m, at VGS= 2.5V, ID= 3.5A RDS(ON) 34m, at VGS= 1.8V, ID= 2.8A
* Continuous Drain Current at TC=25℃ID = 9.0A
* Advanced high cell density Trench Technology
* R

CT8124-T52 Applications

* . Applications
* Notebook
* High side switching
* Power Management Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 3 Aug, 2015 CT8124-T52 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Paramet

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Datasheet Details

Part number
CT8124-T52
Manufacturer
CT Micro
File Size
1.05 MB
Datasheet
CT8124-T52-CTMicro.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET CT Micro
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