Description
CT8124-T52 N-Channel Enhancement MOSFET .
The CT8124.
T52 uses high performance Trench Technology to provide excellent RDS(ON)and low gate charge which is suitable for most of the sync.
Features
* Drain-Source Breakdown Voltage VDSS = 20V
* Drain-Source On-Resistance
RDS(ON) 23m, at VGS= 4.5V, ID= 5.0A RDS(ON) 27m, at VGS= 2.5V, ID= 3.5A RDS(ON) 34m, at VGS= 1.8V, ID= 2.8A
* Continuous Drain Current at TC=25℃ID = 9.0A
* Advanced high cell density Trench Technology
* R
Applications
* . Applications
* Notebook
* High side switching
* Power Management
Package Outline
Schematic
Drain
Gate
Source
Drain Gate
Source
CT Micro Proprietary & Confidential
Page 1
Rev 3 Aug, 2015
CT8124-T52 N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Paramet
