CTL0502NS
N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 20 V
Drain-Source On-Resistance
RDS(ON) 21m, at VGS= 4.5V, ID= 5.0A
RDS(ON) 24m, at VGS= 2.5V, ID= 3.5A
RDS(ON) 31m, at VGS= 1.8V, ID= 2.8A
Continuous Drain Current at TC=25℃ID = 5.0A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Description
The CTL0502NS uses high performance Trench
Technology to provide excellent RDS(ON) and low gate
charge which is suitable for most of the synchronous
buck converter applications.
Applications
Power Management
Lithium Ion Battery
Package Outline
Pin 2
Schematic
Drain
Pin 1
Pin 3
CT Micro
Proprietary & Confidential
Gate
Gate:
Drain:
Source:
Source
Pin 1
Pin 2
Pin 3
Page 1
Rev 1
Aug, 2013
