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CTL1103NS - N-Channel MOSFET

Description

The CTL1103NS uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .

Features

  • Drain-Source Breakdown Voltage VDSS 30 V.
  • Drain-Source On-Resistance RDS(ON) 8.5m, at VGS= 10V, IDS= 5.5A RDS(ON) 12m, at VGS= 4.5V, IDS= 5.5A.
  • Continuous Drain Current at TC=25℃ ID = 11A.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.

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Datasheet Details

Part number CTL1103NS
Manufacturer CT Micro
File Size 975.25 KB
Description N-Channel MOSFET
Datasheet download datasheet CTL1103NS Datasheet
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CTL1103NS N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 30 V  Drain-Source On-Resistance RDS(ON) 8.5m, at VGS= 10V, IDS= 5.5A RDS(ON) 12m, at VGS= 4.5V, IDS= 5.5A  Continuous Drain Current at TC=25℃ ID = 11A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Applications  Power Management  Lithium Ion Battery Description The CTL1103NS uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .
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