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CT Micro

CTL1103NS Datasheet Preview

CTL1103NS Datasheet

N-Channel MOSFET

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CTL1103NS
N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 30 V
Drain-Source On-Resistance
RDS(ON) 8.5m, at VGS= 10V, IDS= 5.5A
RDS(ON) 12m, at VGS= 4.5V, IDS= 5.5A
Continuous Drain Current at TC=25ID = 11A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Applications
Power Management
Lithium Ion Battery
Description
The CTL1103NS uses high performance Trench
Technology to provide excellent RDS(ON) and low gate
charge which is suitable for most of the synchronous
buck converter applications .
Package Outline
Schematic
Pin 1
Source:
Gate:
Drain:
1, 2, 3
4
5, 6, 7, 8
CT Micro
Proprietary & Confidential
Page 1
Rev 1
May, 2013




CT Micro

CTL1103NS Datasheet Preview

CTL1103NS Datasheet

N-Channel MOSFET

No Preview Available !

CTL1103NS
N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
IDM Pulsed Drain Current
PD Total Power Dissipation
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA
Thermal Resistance
Junction-Ambient (t=10s)
Test Conditions
Ratings
30
±20
11
40
1.6
-55 to 150
-55 to 150
Units
V
V
A
A
W
oC
oC
Notes
1
1
2
Min Typ Max Units Notes
-
65
- oC /W
1,4
CT Micro
Proprietary & Confidential
Page 2
Rev 1
May, 2013


Part Number CTL1103NS
Description N-Channel MOSFET
Maker CT Micro
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CTL1103NS Datasheet PDF






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