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CYStech

MTB06N03E3 Datasheet Preview

MTB06N03E3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C441E3
Issued Date : 2010.08.13
Revised Date : 2019.07.31
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTB06N03E3
BVDSS
ID @VGS=10V, TC=25C
VGS=10V, ID=30A
RDSON(TYP)
VGS=4.5V, ID=24A
30V
102A
4 mΩ
5 mΩ
Features
Simple Drive Requirement
Fast Switching Characteristic
Pb-free lead plating and RoHS compliant package
Symbol
MTB06N03E3
Outline
TO-220
GGate
DDrain
SSource
GDS
Ordering Information
Device
MTB06N03E3-0-UB-X
Package
TO-220
(Pb-free lead plating package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB06N03E3
CYStek Product Specification




CYStech

MTB06N03E3 Datasheet Preview

MTB06N03E3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25C)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current @VGS=10V, TC=25C
Continuous Drain Current @VGS=10V, TC=100C
ID
Pulsed Drain Current
IDM
Avalanche Current @ L=0.1mH
IAS
Avalanche Energy
L=2mH, ID=16A, VDD=25V * 2
EAS
Repetitive Avalanche Energy
Total Power Dissipation
L=0.05mH
TC=25°C
TC=100°C
EAR
PD
Operating Junction and Storage Temperature
Tj, Tstg
Note : *1. Pulse width limited by maximum junction temperature.
*2. 100% tested by conditions of L=0.1mH, ID=16A, VGS=10V, VDD=15V
Spec. No. : C441E3
Issued Date : 2010.08.13
Revised Date : 2019.07.31
Page No. : 2/8
Limits
30
±20
102
72
408 *1
40
256
25
94
47
-55~+175
Unit
V
A
mJ
W
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
RθJC
RθJA
Value
1.6
62.5
Unit
C/W
Characteristics (Tj=25C, unless otherwise specified)
Symbol
Min. Typ.
Max. Unit Test Conditions
Static
BVDSS
VGS(th)
IGSS
30 -
1-
-
3
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
-
-
±100
nA VGS=±20V, VDS=0V
IDSS
*RDS(ON)
*GFS
Dynamic
--
1 μA VDS =30V, VGS =0V
- - 25
VDS =30V, VGS =0V, Tj=125C
-
-
4
5
5.3
8.6
mΩ
VGS =10V, ID=30A
VGS =4.5V, ID=24A
- 28 - S VDS =5V, ID=24A
*Qg(VGS=10V)
-
43.9
-
*Qg(VGS=4.5V)
*Qgs
-
-
22.2
5.8
-
-
nC VDS=15V, ID=30A,VGS=10V
*Qgd
- 10
-
*td(ON)
*tr
*td(OFF)
*tf
- 15.6
-
- 15.8
- 50.4
-
-
ns
VDS=15V, ID=30A, VGS=10V,
RGS=1Ω
- 8.4
-
MTB06N03E3
CYStek Product Specification


Part Number MTB06N03E3
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech
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