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MTB06N03E3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple Drive Requirement.
  • Fast Switching Characteristic.
  • Pb-free lead plating and RoHS compliant package Symbol MTB06N03E3 Outline TO-220 G:Gate D:Drain S:Source GDS Ordering Information Device MTB06N03E3-0-UB-X Package TO-220 (Pb-free lead plating package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product.

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Datasheet Details

Part number MTB06N03E3
Manufacturer CYStech
File Size 608.44 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB06N03E3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C441E3 Issued Date : 2010.08.13 Revised Date : 2019.07.31 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTB06N03E3 BVDSS ID @VGS=10V, TC=25C VGS=10V, ID=30A RDSON(TYP) VGS=4.