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MTB06N03E3 - N-Channel Enhancement Mode Power MOSFET

Features

  • Simple Drive Requirement.
  • Fast Switching Characteristic.
  • Pb-free lead plating and RoHS compliant package Symbol MTB06N03E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTB06N03E3-0-UB-X Package TO-220 (Pb-free lead plating package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product.

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Datasheet Details

Part number MTB06N03E3
Manufacturer CYStech
File Size 608.44 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB06N03E3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C441E3 Issued Date : 2010.08.13 Revised Date : 2019.07.31 Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET MTB06N03E3 BVDSS ID @VGS=10V, TC=25C VGS=10V, ID=30A RDSON(TYP) VGS=4.
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