900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






CYStech

MTB1D7N03J3 Datasheet Preview

MTB1D7N03J3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C948J3
Issued Date : 2015.09.14
Revised Date : 2018.05.17
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTB1D7N03J3
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=20A
RDS(ON)@VGS=4.5V, ID=20A
30V
60A
20.6A
2.0 mΩ(typ)
2.3 mΩ(typ)
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
Pb-free lead plating and halogen-free package
Symbol
MTB1D7N03J3
Outline
TO-252(DPAK)
GGate DDrain SSource
G DS
Ordering Information
Device
Package
MTB1D7N03J3-0-T3-G
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape& reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13reel
Product rank, zero for no rank products
Product name
MTB1D7N03J3
CYStek Product Specification




CYStech

MTB1D7N03J3 Datasheet Preview

MTB1D7N03J3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C948J3
Issued Date : 2015.09.14
Revised Date : 2018.05.17
Page No. : 2/ 9
Absolute Maximum Ratings (TC=25C)
Parameter
Symbol
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25C, VGS=10V(silicon limit) (Note 1)
Continuous Drain Current @TC=100C, VGS=10V(silicon limit) (Note 1)
Continuous Drain Current @TC=25C, VGS=10V(package limit) (Note 1)
Continuous Drain Current @TA=25C, VGS=10V
(Note 2)
Continuous Drain Current @TA=70C, VGS=10V
(Note 2)
Pulsed Drain Current @ VGS=10V
(Note 3)
Avalanche Current
Single Pulse Avalanche Energy @ L=0.1mH, ID=60A, VDD=25V (Note 4)
VDS
VGS
ID
IDSM
IDM
IAS
EAS
TC=25C
Power Dissipation
TC=100C
TA=25C
TA=70C
Operating Junction and Storage Temperature
(Note 1)
(Note 1)
(Note 2)
(Note 2)
PD
PDSM
Tj, Tstg
Limits
30
±24
102
72
60
20.6
16.5
372
60
180
68
34
2.5
1.6
-55~+175
Unit
V
A
mJ
W
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol
RθJC
RθJA
Value
2.2
50
Unit
C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2.The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C.
3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles
to keep initial TJ=25°C.
4. 100% tested by conditions of L=0.1mH, IAS=24A, VGS=10V, VDS=25V, rated 30V.
MTB1D7N03J3
CYStek Product Specification


Part Number MTB1D7N03J3
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech
PDF Download

MTB1D7N03J3 Datasheet PDF





Similar Datasheet

1 MTB1D7N03J3 N-Channel Enhancement Mode Power MOSFET
CYStech





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy