MTB1D7N03J3 Datasheet | CYStech

Features - Low On Resistance - Simple Drive Requirement - Low Gate Charge - Fast Switching Characteristic - Pb-free lead plating and halogen-free package Symbol Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device Package MTB1D7N03J3-0-T3-G TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape& reel Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name CYStek Product Specification CYStech Electronics Corp. Spec. No. : C948J3 Issued Date : 2015.09.14 Revised Date : 2018.05.17 Page No. : 2/ 9 Absolute Maximum Ratings (TC=25C) Parameter Symbol Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25C, VGS=10V(silicon limit) (Note 1) Continuous Drain Current @TC=100C, VGS=10V(silicon limit) (Note 1) Continuous Drain Current @TC=25C, VGS=10V(package limit) (Note 1) Continuous Drain Current @TA=25C, VGS=10V (Note 2) Continuous Drain Current @TA=70C, VGS=10V (Note 2) Pulsed Drain Current @ VGS=10V (Note 3) Avalanche Current Single Pulse Avalanche Energy @ L=0.1m H, ID=60A, VDD=25V (Note 4) VDS...