CXT5551E Datasheet (SURFACE MOUNT NPN SILICON TRANSISTOR)

Part: CXT5551E
Manufacturer: Central Semiconductor (official site)
Size: 110.42 KB

CXT5551E Key Features

High Collector Breakdown Voltage: 250V
Low Leakage Current: 50nA MAX
Low Saturation Voltage: 100mV MAX @ 50mA
plementary Device: CXT5401E
SOT-89 Surface Mount Package
Collector-Base Voltage
Collector-Emitter Voltage
VCE(SAT)
VCE(SAT)
Enhanced specification

Other CXT5551E Datasheets

Manufacturer	Part Number	Description
Galaxy Microelectronics	CXT5551	NPN Silicon Epitaxial Planar Transistor
Kexin Semiconductor	CXT5551	Surface Mount NPN Silicon Transistor
Yangjie Electronic	CXT5551	NPN General Purpose Amplifier
MLS Microelectronics	CXT5551	NPN Transistor
Micro Commercial Components	CXT5551	NPN Plastic Encapsulate Transistors

CXT5551E Description

The CENTRAL SEMICONDUCTOR CXT5551E is an NPN Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications requiring high breakdown voltage. FULL PART NUMBER SOT-89 CASE APPLICATIONS: General purpose switching and amplification Telephone applications.