+0.1 2.50-0.1
+0.1 0.48-0.1 +0.1 0.53-0.1
Low voltage (max. 150 V). +0.1 0.80-0.1
+0.1 0.44-0.1
2.60
+0.1 -0.1
+0.1 4.00-0.1
High current (max. 500mA). +0.1 3.00-0.1
0.40
1. Base 2. Collector 3. Emiitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) power dissipation thermal resistance Junction-to-ambient Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PD R
JA
Rating 180 160 6 60.
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SMD Type
Transistors
Surface Mount NPN Silicon Transistor KXT5551 (CXT5551)
SOT-89
4.50
+0.1 -0.1
Unit: mm 1.50
+0.1 -0.1
+0.1 1.80-0.1
Features
+0.1 2.50-0.1
+0.1 0.48-0.1 +0.1 0.53-0.1
Low voltage (max. 150 V).
+0.1 0.80-0.1
+0.1 0.44-0.1
2.60
+0.1 -0.1
+0.1 4.00-0.1
High current (max. 500mA).
+0.1 3.00-0.1
0.40
1. Base 2. Collector 3. Emiitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) power dissipation thermal resistance Junction-to-ambient Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PD R
JA
Rating 180 160 6 600 1.