MLSM CXT5551
NPN Transistor
FEATURES
● Switching and amplification in high voltageAPPLICATIONS
such as telephony● Low current(max. 600mA)
● High voltage(max.180v) CXT5551 Transistor (NPN) 1G6 SOT-89-3L top view Schematic diagram BCE Marking and pin assignment
MAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Ic Collector Current Pc Collector Power Dissipation TJ , TSTG Operating and Storage Temperature Range Value 180 160 6 0.6 0.5 -55~+150 Unit V V V A W ℃ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Symbol Parameter V(BR)CBO Collector-base breakdown voltage V(BR)CEO Collector-emitter breakdown voltage V(BR)EBO Emitter-base breakdown voltage ICBO Collector cut-off current IEBO Emitter cut-off current hFE1 hFE2 DC current gain hFE3 VCE(sat) Collector-emitter saturation voltage VBE(sat) fT Cob NF Base-emitter voltage Transition frequency Collector output capacitance Noise Figure Test conditions I...