Galaxy Century Microelectronics CXT5551
NPN Silicon Epitaxial Planar Transistor
FEATURES
● Epitaxial planar die construction● Switching and amplification in high voltage
● Low current
● High voltage
● Complementary to CXT5401
● RoHS compliant with Halogen-free
MECHANICAL DATA
● Case: SOT-89● Molding compound: UL flammability classification rating 94V-0
● Terminals: Tin-plated; solderability per MIL-STD-202, Method 208 SOT-89 Ordering Information Part Number CXT5551 Package SOT-89 Shipping Quantity 1000 pcs / Tape & Reel Marking Code 1G6
MAXIMUM RATINGS
(@ TA = 25°C unless otherwise specified) Parameter Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Current (Continuous) Collector Current (Peak) Symbol VCBO VCEO VEBO IC ICM Thermal Characteristics Parameter Symbol Power Dissipation *1 PD Thermal Resistance Junction-to-Air *1 RθJA Thermal Resistance Junction-to-Air *2 RθJA Thermal Resistance Junction-to-Case *2 RθJC Thermal Resistance Junction-to-Lead *2 RθJL Junction Temperature Range TJ Storage Temperature Range TSTG Notes: 1.