CEB6031L transistor equivalent, n-channel logic level enhancement mode field effect transistor.
30V , 60A , RDS(ON)=10m Ω @VGS=10V. RDS(ON)=15m Ω @VGS=4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 &.
Image gallery
Download