CEB6031LS2 transistor equivalent, n-channel logic level enhancement mode field effect transistor.
30V , 60A , RDS(ON)=12m Ω @VGS=10V.
RDS(ON)=17mΩ @VGS=4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-22.
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