CEM4539 channel) equivalent, dual enhancement mode field effect transistor(n and p channel).
30V, 5.8A, RDS(ON) = 37mΩ @VGS = 10V. RDS(ON) = 55mΩ @VGS = 4.5V.
-30V, -4.9A, RDS(ON) = 53mΩ @VGS = -10V. RDS(ON) = 95mΩ @VGS = -4.5V.
Super high dense cell design for .
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