CET451AN transistor equivalent, n-channel enhancement mode field effect transistor.
30V, 7.2A, RDS(ON) = 35mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V.
High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SO.
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