MX2319 Datasheet, MOSFET, ChipSourceTek

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MX2319 Features and benefits

VDS >=-18V,ID = -7A k RDS(ON)(Typ.) =17mΩ@ VGS=-4.5V RDS(ON) (Typ.)= 22mΩ @ VGS=-2.5V e Asvanced trench MOSFET process technology T Ultra low on-resistance with low gat.

MX2319 Application

s G General Features VDS >=-18V,ID = -7A k RDS(ON)(Typ.) =17mΩ@ VGS=-4.5V RDS(ON) (Typ.)= 22mΩ @ VGS=-2.5V e Asvance.

MX2319 Description

The MX2319 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gatevoltages as low as 2.5V. This device is suitable for use as a load switching application and a wide variety of other applications. s G G.

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