VDS = 60V,ID = 45A RDS(ON)(Typ.) < 8.5mΩ @ VGS=10V
RDS(ON)(Typ.) < 11mΩ @ VGS=-4.5V k High density cell design for ultra low Rdson e Fully characterized avalanche volta.
MXN6542
General Features
VDS = 60V,ID = 45A RDS(ON)(Typ.) < 8.5mΩ @ VGS=10V
RDS(ON)(Typ.) < 11mΩ @ VGS=-4.5V k High .
The MXN6542 uses advanced trench technology and design to provide excellent RDS(ON), With low gate charge. It can be used in awide variety Of applications.
MXN6542
General Features
VDS = 60V,ID = 45A RDS(ON)(Typ.) < 8.5mΩ @ VGS=10V
RDS(ON)(Typ.) <.
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