MXN2386 Datasheet, MOSFET, ChipSourceTek

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MXN2386 Features and benefits

Schematic diagram
* VDS =20V，ID =12A @VGS=4.5V RDS(ON)(Typ.)=6mΩ @VGS=4.2V RDS(ON)(Typ.)=6.4mΩ @VGS=3.8V RDS(ON)(Typ.)=6.6mΩ @VGS=2.5V RDS(ON)(Typ.)=8.3mΩ ESD Rat.

MXN2386 Application

It is ESD protested.. General Featuies MXN2386 General Features Schematic diagram
* VDS =20V，ID =12A @VGS=4.5V R.

MXN2386 Description

The MXN2386 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications. It is ESD protested.. General Featuies .

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