Schematic diagram
* VDS =-30V,ID =-50A
* RDS(ON) (Typ.)= 4.4m Ω @ VGS=-10V High density cell design for ultra low Rdson
Fully characterized avalanche voltage a.
MXN6545
General Features
Schematic diagram
* VDS =-30V,ID =-50A
* RDS(ON) (Typ.)= 4.4m Ω @ VGS=-10V High de.
The MXN6545 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be
Used in a wide variety of applications.
MXN6545
General Features
Schematic diagram
* VDS =-30V,ID =-50A
* RDS(ON) (Typ.)= .
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