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PE8209HN Datasheet, MOSFET, ChipSourceTek

PE8209HN Datasheet, MOSFET, ChipSourceTek

PE8209HN

datasheet Download (Size : 684.12KB)

PE8209HN Datasheet
PE8209HN

datasheet Download (Size : 684.12KB)

PE8209HN Datasheet

PE8209HN Features and benefits

PE8209HN Features and benefits


* VDS = 18V, ID = 9A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=3.8V RDS(ON) < 14mΩ @ VGS=3.1V RDS(ON) < 16mΩ @ VGS=2.5V Schematic diagram ESD Rating: 4000V HBM.

PE8209HN Application

PE8209HN Application

It is ESD protected. PE8209HN General Features
* VDS = 18V, ID = 9A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VG.

PE8209HN Description

PE8209HN Description

The PE8209HN uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected. PE8209HN General Features
* VDS = 18V, ID = 9A RDS(ON) < 11mΩ @ VGS=4.5V RDS(O.

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TAGS

PE8209HN
N-Channel
Enhancement
Mode
Power
MOSFET
ChipSourceTek

Manufacturer


ChipSourceTek

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