PE8205 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 20V, ID = 6A
RDS(ON) < 26mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=3.8V RDS(ON) < 36mΩ @ VGS=2.5V
Schematic diagram
* High Power and current handing capability.
PE8205
General Features
* VDS = 20V, ID = 6A
RDS(ON) < 26mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=3.8V RDS(ON) < 36mΩ @.
The PE8205 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
PE8205
General Features
* VDS = 20V, ID = 6A
RDS(ON) < 26mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=3.8V RDS(.
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