• Part: PE8209HM1
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: ChipSourceTek
  • Size: 739.04 KB
PE8209HM1 Datasheet (PDF) Download
ChipSourceTek
PE8209HM1

Description

The PE8209HM1 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

Key Features

  • VDS = 18V, ID = 10A RDS(ON) < 12mΩ @ VGS=4.5V RDS(ON) < 13mΩ @ VGS=3.8V RDS(ON) < 15.5mΩ @ VGS=3.1V RDS(ON) < 20mΩ @ VGS=2.5V Schematic diagram ESD Rating: 4000V HBM
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package k Application e
  • PWM applications
  • Load switch T
  • Power management
  • Battery protection Marking ource Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Parameter S Drain-Source Voltage ip Gate-Source Voltage Drain Current-Continuous h Drain Current-Continuous (TA=70℃ ) C Pulsed Drain Current (Note 1) Symbol