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Comset Semiconductor

2N3790 Datasheet Preview

2N3790 Datasheet

(2N3789 - 2N3792) EPITAXIAL-BASE TRANSISTORS

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PNP 2N3789 – 2N3790 – 2N3791 – 2N3792
EPITAXIAL-BASE TRANSISTORS
The 2N3789, 2N3790, 2N3791 and 2N3792 are silicon epitaxial-base PNP power transistor in
Jedec TO-3 metal case. They are inteded for use in power linear and switching applications.
The 2N3713, 2N3714, 2N3715 and 2N3716 complementary NPN types are respectively.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
Collector-BaseVoltage IE = 0
VCEO
VEBO
IC
IB
PD
TJ
TS
Collector-Emitter
Voltage
IB = 0
www.DataSheet.net/
Emitter-Base Voltage
Collector Current
Base Current
IC = 0
Total Device Dissipation @ TC = 25°
Junction Temperature
Storage Temperature
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJC
Thermal Resistance, Junction to Case (Max)
2N3789
2N3791
2N3790
2N3792
2N3789
2N3791
2N3790
2N3792
Value
-80
-100
-60
-80
-7
-10
-4
150
-65 to +200
Unit
V
V
V
A
A
W
°C
Value
1.17
Unit
°C/W
05/11/2012
COMSET SEMICONDUCTORS
1|4
Datasheet pdf - http://www.DataSheet4U.co.kr/




Comset Semiconductor

2N3790 Datasheet Preview

2N3790 Datasheet

(2N3789 - 2N3792) EPITAXIAL-BASE TRANSISTORS

No Preview Available !

PNP 2N3789 – 2N3790 – 2N3791 – 2N3792
ELETRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
VCEO(BR)
Collector-Emitter
Breakdown Voltage
IC=-200 mA, IB=0 (*)
2N3789
2N3791
2N3790
2N3792
-60
-80
-
-
-
-
V
2N3789
VCEO(SUS)
Collector-Emitter
Sustaining Voltage (*)
IC=-200 mA, IB=0 (*)
2N3791
2N3790
2N3792
-60
-80
-
-
-
-
V
Collector-Emitter
ICEO Current
VCE=-30 V, IB=0
VCE=-40 V, IB=0
2N3789
2N3791
2N3790
2N3792
-
-
- -0.7
mA
- -0.7
VCE=-80 V, VEB=1.5 V
2N3789
2N3791
-
- -1
ICEV
Collector Cutoff Current
www.DataSheet.net/
VCE=-100 V, VEB=1.5 V
VCE=-60 V, VEB=1.5 V
TC = 150°C
2N3790
2N3792
2N3789
2N3791
-
-
- -1
mA
- -10
VCE=-80 V, VEB=1.5 V 2N3790
TC = 150°C
2N3792
-
- -10
2N3713
IEBO Emitter Cutoff Current VBE=-7 V, IC=0
2N3714
2N3715
-
- -5 mA
2N3716
IC=-1 A, VCE=-2 V
2N3789
2N3790
2N3791
2N3792
25
50
- 90
- 150
hFE
DC Current Gain (*) (**) IC=-3 A, VCE=-2 V
2N3789
2N3790
2N3791
2N3792
15
30
-
-
-
-
-
2N3789
IC=-10 A, VCE=-4 V
2N3790
2N3791
5
-
-
2N3792
VCE(SAT)
Collector-Emitter
saturation Voltage (*)
(**)
IC=-5 A, IB=-0.5 A
2N3791
2N3792
-
- -1 V
05/11/2012
COMSET SEMICONDUCTORS
2|4
Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number 2N3790
Description (2N3789 - 2N3792) EPITAXIAL-BASE TRANSISTORS
Maker Comset Semiconductor
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2N3790 Datasheet PDF






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