CY15B102QN Datasheet | Cypress

Features - 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K × 8 - Virtually unlimited endurance of 10 trillion (1013) read/write cycles - 121-year data retention (see Data Retention and Endurance on page 19) - No Delay™ writes - Advanced high-reliability ferroelectric process - Fast serial peripheral interface (SPI) - Up to 50 MHz frequency - Supports SPI mode 0 (0, 0) and mode 3 (1, 1) - Sophisticated write protection scheme - Hardware protection using the Write Protect (WP) pin - Software protection using Write Disable (WRDI) instruction - Software block protection for 1/4, 1/2, or entire array - Device ID and Serial Number - Device ID includes manufacturer ID and product ID - Unique ID - Serial Number - Dedicated 256-byte special sector F-RAM - Dedicated special sector write and read - Stored content can survive up to 3 standard reflow soldering cycles - Low-power consumption - 3.7 m A (typ) active current at 40 MHz - 2.7 µA (typ) standby current - 1.1 µA (typ) Deep Power Down mode current - 0.1 µA (typ) Hibernate mode current - Low-voltage operation: - CY15V102QN: VDD = 1.71 V to 1.89 V - CY15B102QN: VDD = 1.8 V to 3.6 V - Automotive operating temperature: - 40 °C to +125 °C - AEC-Q100 Grade 1 pliant - 8-pin Small Outline Integrated Circuit (SOIC) package - Restriction of hazardous substances (Ro HS) pliant Functional Description The Excelon-Auto CY15X102QN is an automotive grade, 2-Mbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the plexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories. Unlike serial flash and EEPROM, the CY15X102QN performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is...