CY15B102QN
CY15V102QN
Excelon™-Auto 2-Mbit (256K × 8)
Automotive-E Serial (SPI) F-RAM
Excelon™-Auto 2-Mbit (256K × 8) Automotive-E Serial (SPI) F-RAM
Features
■ 2-Mbit ferroelectric random access memory (F-RAM) logically
organized as 256K × 8
❐ Virtually unlimited endurance of 10 trillion (1013) read/write
cycles
❐ 121-year data retention (see Data Retention and Endurance
on page 19)
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
■ Fast serial peripheral interface (SPI)
❐ Up to 50 MHz frequency
❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
■ Sophisticated write protection scheme
❐ Hardware protection using the Write Protect (WP) pin
❐ Software protection using Write Disable (WRDI) instruction
❐ Software block protection for 1/4, 1/2, or entire array
■ Device ID and Serial Number
❐ Device ID includes manufacturer ID and product ID
❐ Unique ID
❐ Serial Number
■ Dedicated 256-byte special sector F-RAM
❐ Dedicated special sector write and read
❐ Stored content can survive up to 3 standard reflow soldering
cycles
■ Low-power consumption
❐ 3.7 mA (typ) active current at 40 MHz
❐ 2.7 µA (typ) standby current
❐ 1.1 µA (typ) Deep Power Down mode current
❐ 0.1 µA (typ) Hibernate mode current
■ Low-voltage operation:
❐ CY15V102QN: VDD = 1.71 V to 1.89 V
❐ CY15B102QN: VDD = 1.8 V to 3.6 V
■ Automotive operating temperature: –40 °C to +125 °C
■ AEC-Q100 Grade 1 compliant
■ 8-pin Small Outline Integrated Circuit (SOIC) package
■ Restriction of hazardous substances (RoHS) compliant
Functional Description
The Excelon-Auto CY15X102QN is an automotive grade, 2-Mbit
nonvolatile memory employing an advanced ferroelectric
process. A ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes similar to a RAM. It
provides reliable data retention for 121 years while eliminating
the complexities, overhead, and system-level reliability problems
caused by serial flash, EEPROM, and other nonvolatile
memories.
Unlike serial flash and EEPROM, the CY15X102QN performs
write operations at bus speed. No write delays are incurred. Data
is written to the memory array immediately after each byte is
successfully transferred to the device. The next bus cycle can
commence without the need for data polling. In addition, the
product offers substantial write endurance compared to other
nonvolatile memories. The CY15X102QN is capable of
supporting 1013 read/write cycles, or 10 million times more write
cycles than EEPROM.
These capabilities make the CY15X102QN ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data collection, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of serial flash or EEPROM can cause data loss.
The CY15X102QN provides substantial benefits to users of
serial EEPROM or flash as a hardware drop-in replacement. The
CY15X102QN uses the high-speed SPI bus, which enhances
the high-speed write capability of F-RAM technology. The device
incorporates a read-only Device ID and Unique ID features,
which allow the host to determine the manufacturer, product
density, product revision, and unique ID for each part. The device
also provides a writable, 8-byte serial number registers, which
can be used to identify a specific board or a system.
For a complete list of related resources, click here.
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 002-19073 Rev. *M
• San Jose, CA 95134-1709 • 408-943-2600
Revised April 17, 2019
