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CY7C1145KV18 - 18-Mbit QDR II+ SRAM Four-Word Burst Architecture

Download the CY7C1145KV18 datasheet PDF (CY7C1143KV18 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 18-mbit qdr ii+ sram four-word burst architecture.

Features

  • Separate independent read and write data ports.
  • Supports concurrent transactions.
  • 450-MHz clock for high bandwidth.
  • Four-word burst for reducing address bus frequency.
  • Double data rate (DDR) Interfaces on both read and write ports (data transferred at 900 MHz) at 450 MHz.
  • Available in 2.0 clock cycle latency.
  • Two input clocks (K and K) for precise DDR timing.
  • SRAM uses rising edges only.
  • Echo clocks (CQ and CQ) simplify data capture in high-speed sys.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY7C1143KV18-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Cypress Semiconductor
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Full PDF Text Transcription

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 CY7C1143KV18/CY7C1145KV18 18-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) 18-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) Features ■ Separate independent read and write data ports ❐ Supports concurrent transactions ■ 450-MHz clock for high bandwidth ■ Four-word burst for reducing address bus frequency ■ Double data rate (DDR) Interfaces on both read and write ports (data transferred at 900 MHz) at 450 MHz ■ Available in 2.
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