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Cypress Semiconductor Electronic Components Datasheet

CY7C1363C Datasheet

(CY7C1361C / CY7C1363C) 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM

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PRELIMINARY
CY7C1361C
CY7C1363C
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
Features
Functional Description[1]
• Supports 133-MHz bus operations
• 256K × 36/512K × 18 common I/O
• 3.3V –5% and +10% core power supply (VDD)
• 2.5V or 3.3V I/O supply (VDDQ)
• Fast clock-to-output times
— 6.5 ns (133-MHz version)
— 7.5 ns (117-MHz version)
— 8.5 ns (100-MHz version)
• Provide high-performance 2-1-1-1 access rate
User-selectable burst counter supporting Intel
Pentiuminterleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed write
• Asynchronous output enable
Available in Lead-Free 100 TQFP,119 BGA and 165 fBGA
packages Both 2 and 3 Chip Enable Options for TQFP
• IEEE 1149.1 compatible JTAG Boundary Scan for BGA
and fBGA packages
•“ZZ” Sleep Mode option
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Selection Guide
The CY7C1361C/CY7C1363C is a 3.3V, 256K x 36 and 512K x
18 Synchronous Flowthrough SRAMs, respectively designed
to interface with high-speed microprocessors with minimum
glue logic. Maximum access delay from clock rise is 6.5 ns
(133-MHz version). A 2-bit on-chip counter captures the first
address in a burst and increments the address automatically
for the rest of the burst access. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
a(CCnoEdn1tr)Bo, WldienEpp)tu,ht-saen(xAdpDaGnSslCoiob,nAalCDWhSiPpr,itEeanna(dGbAlWeDs)V.()C,AEWs2yrniatcenhdEroCnnaEob3ul[e2s]s),i(nBBpuWurstxst,
include the Output Enable (OE) and the ZZ pin.
The CY7C1361C/CY7C1363C allows either interleaved or
linear burst sequences, selected by the MODE input pin. A
HIGH selects an interleaved burst sequence, while a LOW
selects a linear burst sequence. Burst accesses can be
initiated with the Processor Address Strobe (ADSP) or the
cache Controller Address Strobe (ADSC) inputs. Address
advancement is controlled by the Address Advancement
(ADV) input.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
The CY7C1361C/CY7C1363C operates from a +3.3V core
power supply while all outputs may operate with either a +2.5
or +3.3V supply. All inputs and outputs are JEDEC-standard
JESD8-5-compatible.
133 MHz
117 MHz
100 MHz
Maximum Access Time
6.5 7.5 8.5
Maximum Operating Current
250 220 180
Maximum CMOS Standby Current 30 30 30
Notes:
1. For best–practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
2. CE3 is for A version of TQFP ( 3 Chip Enable Option) and 165 fBGA package only. 119 BGA is offered only in 2 Chip Enable.
Unit
ns
mA
mA
Cypress Semiconductor Corporation • 3901 North First Street • San Jose, CA 95134 •
408-943-2600
Document #: 38-05541 Rev. *A
Revised October 5, 2004


Cypress Semiconductor Electronic Components Datasheet

CY7C1363C Datasheet

(CY7C1361C / CY7C1363C) 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM

No Preview Available !

PRELIMINARY
CY7C1361C
CY7C1363C
Logic Block Diagram – CY7C1361C (256K x 36)
A0, A1, A
MODE
ADV
CLK
ADSC
ADSP
BWD
BWC
BWB
BWA
BWE
GW
CE1
CE2
CE3
OE
ADDRESS
REGISTER
A[1:0]
BURST Q1
COUNTER
AND LOGIC
CLR Q0
DQD, DQPD
BYTE
WRITE REGISTER
DQC, DQPC
BYTE
WRITE REGISTER
DQB, DQPB
BYTE
WRITE REGISTER
DQA, DQPA
BYTE
WRITE REGISTER
ENABLE
REGISTER
ZZ
SLEEP
CONTROL
DQD, DQPD
BYTE
WRITE REGISTER
DQC, DQPC
BYTE
WRITE REGISTER
DQB, DQPB
BYTE
WRITE REGISTER
DQA, DQPA
BYTE
WRITE REGISTER
MEMORY
ARRAY
SENSE
AMPS
OUTPUT
BUFFERS
DQs
DQPA
DQPB
DQPC
DQPD
INPUT
REGISTERS
1
Logic Block Diagram – CY7C1363C (512K x 18)
A0,A1,A
MODE
ADV
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ADSC
ADSP
BWB
ADDRESS
REGISTER
A[1:0]
BURST Q1
COUNTER AND
LOGIC
CLR Q0
DQB,DQPB
WRITE REGISTER
DQA,DQPA
BWA WRITE REGISTER
BWE
GW
CE1
CE2
ENABLE
REGISTER
CE3
OE
DQB,DQPB
WRITE DRIVER
DQA,DQPA
WRITE DRIVER
MEMORY
ARRAY
SENSE
AMPS
OUTPUT
BUFFERS
DQs
DQPA
DQPB
INPUT
REGISTERS
ZZ SLEEP
CONTROL
Document #: 38-05541 Rev. *A
Page 2 of 30


Part Number CY7C1363C
Description (CY7C1361C / CY7C1363C) 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
Maker Cypress Semiconductor
Total Page 30 Pages
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