CYK256K16SCCB - 4-Mbit (256K x 16) Pseudo Static RAM

Cypress Semiconductor

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Datasheet Details

Part number	CYK256K16SCCB
Manufacturer	Cypress Semiconductor
File Size	337.91 KB
Description	4-Mbit (256K x 16) Pseudo Static RAM
Datasheet	CYK256K16SCCB_CypressSemiconductor.pdf

CYK256K16SCCB Product details

Description

1] in portable applications such as cellular telephones.The device can be put into standby mode reducing power consumption dramatically when deselected (CE1 LOW, CE2 HIGH or both BHE and BLE are HIGH).The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1 HIGH, CE2 LOW, OE is deasserted HIGH), or during a write operation (Chip Enabled and Write Enable WE LOW).Reading from the device is accomplished by asserting the Chip Enables (CE1 LOW and CE2

Features

Advanced low-power MoBL® architecture.
High speed: 55 ns, 60 ns and 70 ns.
Wide voltage range: 2.7V to 3.3V.
Typical active current: 1 mA @ f = 1 MHz.
Low standby power.
Automatic power-down when deselected www. DataSheet4U. com Functional.

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Published: May 14, 2010 |