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CYK256K16MCCB - 4-Mbit (256K x 16) Pseudo Static RAM

Datasheet Summary

Description

of read and write modes.

The CYK256K16MCCB is a high-performance CMOS Pseudo static RAM organized as 256K words by 16 bits that supports an asynchronous memory interface.

Features

  • Wide voltage range: 2.70V.
  • 3.30V.
  • Access time: 55 ns, 60 ns and 70 ns.
  • Ultra-low active power.
  • Typical active current: 1 mA @ f = 1 MHz.
  • Typical active current: 8 mA @ f = fmax (70-ns speed).
  • Ultra low standby power.
  • Automatic power-down when deselected www. DataSheet4U. com.
  • CMOS for optimum speed/power.
  • Offered in a 48-ball BGA package can be put into standby mode when deselected (CE HIGH or both BHE and BLE.

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Datasheet Details

Part number CYK256K16MCCB
Manufacturer Cypress Semiconductor
File Size 412.49 KB
Description 4-Mbit (256K x 16) Pseudo Static RAM
Datasheet download datasheet CYK256K16MCCB Datasheet
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CYK256K16MCCB MoBL3™ 4-Mbit (256K x 16) Pseudo Static RAM Features • Wide voltage range: 2.70V–3.30V • Access time: 55 ns, 60 ns and 70 ns • Ultra-low active power — Typical active current: 1 mA @ f = 1 MHz — Typical active current: 8 mA @ f = fmax (70-ns speed) • Ultra low standby power • Automatic power-down when deselected www.DataSheet4U.com • CMOS for optimum speed/power • Offered in a 48-ball BGA package can be put into standby mode when deselected (CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE LOW and WE LOW).
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