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CYK256K16MCCB MoBL3™
4-Mbit (256K x 16) Pseudo Static RAM
Features
• Wide voltage range: 2.70V–3.30V • Access time: 55 ns, 60 ns and 70 ns • Ultra-low active power — Typical active current: 1 mA @ f = 1 MHz — Typical active current: 8 mA @ f = fmax (70-ns speed) • Ultra low standby power • Automatic power-down when deselected www.DataSheet4U.com • CMOS for optimum speed/power • Offered in a 48-ball BGA package can be put into standby mode when deselected (CE HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE LOW and WE LOW).