Datasheet4U Logo Datasheet4U.com

CYK256K16SCCB - 4-Mbit (256K x 16) Pseudo Static RAM

Datasheet Summary

Description

in portable applications such as cellular telephones.

The device can be put into standby mode reducing power consumption dramatically when deselected (CE1 LOW, CE2 HIGH or both BHE and BLE are HIGH).

Features

  • Advanced low-power MoBL® architecture.
  • High speed: 55 ns, 60 ns and 70 ns.
  • Wide voltage range: 2.7V to 3.3V.
  • Typical active current: 1 mA @ f = 1 MHz.
  • Low standby power.
  • Automatic power-down when deselected www. DataSheet4U. com Functional.

📥 Download Datasheet

Datasheet preview – CYK256K16SCCB

Datasheet Details

Part number CYK256K16SCCB
Manufacturer Cypress Semiconductor
File Size 337.91 KB
Description 4-Mbit (256K x 16) Pseudo Static RAM
Datasheet download datasheet CYK256K16SCCB Datasheet
Additional preview pages of the CYK256K16SCCB datasheet.

📁 Similar Datasheet

Other Datasheets by Cypress Semiconductor

Full PDF Text Transcription

Click to expand full text
CYK256K16SCCB 4-Mbit (256K x 16) Pseudo Static RAM Features • Advanced low-power MoBL® architecture • High speed: 55 ns, 60 ns and 70 ns • Wide voltage range: 2.7V to 3.3V • Typical active current: 1 mA @ f = 1 MHz • Low standby power • Automatic power-down when deselected www.DataSheet4U.com Functional Description[1] in portable applications such as cellular telephones. The device can be put into standby mode reducing power consumption dramatically when deselected (CE1 LOW, CE2 HIGH or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE1 HIGH, CE2 LOW, OE is deasserted HIGH), or during a write operation (Chip Enabled and Write Enable WE LOW).
Published: |