BTD1758J3 Key Features
- Low VCE(sat), VCE(sat)=0.4 V (typical), at IC / IB = 2A / 0.5A
- Excellent current gain characteristics
- plementary to BTB1182J3
- Part: BTD1758J3
- Manufacturer: Cystech Electonics
- Size: 142.20 KB
Related Cystech Electonics Datasheets
| Part Number | Description |
|---|---|
| BTD1760J3 | NPN Epitaxial Planar Transistor |
| BTD1766M3 | NPN Epitaxial Planar Transistor |
| BTD1768A3 | NPN Epitaxial Planar Transistor |
| BTD1768N3 | NPN Epitaxial Planar Transistor |
| BTD1383L3 | NPN Epitaxial Planar Transistor |
BTD1758J3 Description
CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. 2003.05.25 Revised Date.