* Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A
* Excellent current gain characteristics
* Complementary to BTB1243AI3 Symbol BTD1864AI3 Outline TO-251 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Volta
BTD1864AI3 Datasheet (153.55 KB)
BTD1864AI3
Cystech Electonics
153.55 KB
Npn epitaxial planar transistor.
CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C849I3 Issued Date : 2003.04.18 Revised Date : Page No. : 1/4 BTD18.
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