BTD2150A3 Description
CYStech Electronics Corp. 2005.02.04 Revised Date :2015.03.20 Page No. 1/7 Low Vcesat NPN Epitaxial Planar Transistor BTD2150A3 BVCEO IC RCESAT (Typ) 50V 3A 125mΩ.
BTD2150A3 Key Features
- Low VCE(sat), typically 0.25V at IC / IB = 2A / 100mA 0.1V at IC / IB = 1A / 50mA
- Excellent current gain characteristics
- plementary to BTB1424A3
- Pb-free lead plating and halogen-free package