• Part: MTB020N03KN3
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: Cystech Electonics
  • Size: 416.90 KB
Download MTB020N03KN3 Datasheet PDF
Cystech Electonics
MTB020N03KN3
MTB020N03KN3 is N-Channel Enhancement Mode Power MOSFET manufactured by Cystech Electonics.
Features - Simple drive requirement - Small package outline - ESD protected gate - Pb-free lead plating and halogen-free package Symbol Outline SOT-23 D G:Gate S:Source D:Drain Ordering Information Device Package Shipping MTB020N03KN3-0-T1-G SOT-23 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name CYStek Product Specification CYStech Electronics Corp. Spec. No. : C143N3 Issued Date : 2016.01.21 Revised Date : 2016.02.22 Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current @ TA=25°C, VGS=10V (Note 3) Continuous Drain Current @ TA=70°C, VGS=10V (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation@ TA=25℃ (Note 3) Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD Tj ; Tstg Limits 30 ±20 5.9 4.7 34 0.01 -55~+150 Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad Unit V W...