MTB020N03KN3
MTB020N03KN3 is N-Channel Enhancement Mode Power MOSFET manufactured by Cystech Electonics.
Features
- Simple drive requirement
- Small package outline
- ESD protected gate
- Pb-free lead plating and halogen-free package
Symbol
Outline
SOT-23 D
G:Gate S:Source D:Drain
Ordering Information
Device
Package
Shipping
MTB020N03KN3-0-T1-G
SOT-23 (Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for Ro HS pliant products, G for Ro HS pliant and green pound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products Product name
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C143N3 Issued Date : 2016.01.21 Revised Date : 2016.02.22 Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current @ TA=25°C, VGS=10V (Note 3)
Continuous Drain Current @ TA=70°C, VGS=10V (Note 3) Pulsed Drain Current (Notes 1, 2)
Maximum Power Dissipation@ TA=25℃ (Note 3) Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID IDM PD
Tj ; Tstg
Limits 30 ±20 5.9 4.7 34
0.01 -55~+150
Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad
Unit V
W...