MTB020N03E3 Datasheet - Cystech Electonics

MTB020N03E3 N-Channel Enhancement Mode Power MOSFET

MTB020N03E3 Features

* RDS(ON)@VGS=10V, ID=20A

* Low Gate Charge

* Simple Drive Requirement

* Repetitive Avalanche Rated

* Fast Switching Characteristic

* Pb-free lead plating and RoHS compliant package 30V 34A 18mΩ (typ) Symbol MTB020N03E3 Outline TO-220 G：Gate D：Drain S：

Datasheet Details

MTB020N03E3

Cystech Electonics

318.21 KB

N-channel enhancement mode power mosfet.

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