* RDS(ON)@VGS=10V, ID=20A
* Low Gate Charge
* Simple Drive Requirement
* Repetitive Avalanche Rated
* Fast Switching Characteristic
* Pb-free lead plating and RoHS compliant package 30V 34A 18mΩ (typ) Symbol MTB020N03E3 Outline TO-220 G：Gate D：Drain S：
MTB020N03E3 Datasheet (318.21 KB)
MTB020N03E3
Cystech Electonics
318.21 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C737E3 Issued Date : 2016.06.23 Revised Date : Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTB020N0.
📁 Related Datasheet
MTB020N03KJ3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB020N03KL3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB020N03KM3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB020N03KN3 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB020N03KN6 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB020N03KQ8 N-Channel Enhancement Mode MOSFET (Cystech Electonics)
MTB020N03KV8 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
MTB020N03V8 N-Channel Enhancement Mode Power MOSFET (CYStech)
MTB020N06KE3 N-Channel Enhancement Mode Power MOSFET (CYStech)
MTB020N06KH8 N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
