MTB020N03E3 N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.Spec.No.: C737E3 Issued Date : 2016.06.23 Revised Date : Page No.: 1/8 N-Channel Enhancement Mode Power MOSFET MTB020N0.

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Datasheet Specifications

Part number: MTB020N03E3
Manufacturer: Cystech Electonics
File Size: 318.21 KB
Datasheet: MTB020N03E3-CystechElectonics.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* RDS(ON)@VGS=10V, ID=20A
* Low Gate Charge
* Simple Drive Requirement
* Repetitive Avalanche Rated
* Fast Switching Characteristic
* Pb-free lead plating and RoHS compliant package 30V 34A 18mΩ (typ) Symbol MTB020N03E3 Outline TO-220 G：Gate D：Drain S：

Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB020N03E3 CYStek Product Specification

MTB020N03E3 Distributors

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MTB020N03E3 N-Channel Enhancement Mode Power MOSFET Cystech Electonics

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