* RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=15A
* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* ESD protected gate
* RoHS compliant package 60V 41A 8.4A 12.7 mΩ(typ) 17.8 mΩ(typ) Symbol MTB020N06K
MTB020N06KE3 Datasheet (396.59 KB)
MTB020N06KE3
CYStech
396.59 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C103E3 Issued Date : 2017.02.14 Revised Date : 2017.04.05 Page No. : 1/ 8
N-Channel Enhancement Mode Power MOS.
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