MTB020N06KE3 N-Channel Enhancement Mode Power MOSFET

CYStech

Description

CYStech Electronics Corp.Spec.No.: C103E3 Issued Date : 2017.02.14 Revised Date : 2017.04.05 Page No.: 1/ 8 N-Channel Enhancement Mode Power MOS.

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Datasheet Specifications

Part number: MTB020N06KE3
Manufacturer: CYStech
File Size: 396.59 KB
Datasheet: MTB020N06KE3-CYStech.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=15A
* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* ESD protected gate
* RoHS compliant package 60V 41A 8.4A 12.7 mΩ(typ) 17.8 mΩ(typ) Symbol MTB020N06K

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MTB020N06KE3 N-Channel Enhancement Mode Power MOSFET CYStech

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