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MTB020N10RH8 - N-Channel Enhancement Mode Power MOSFET

CYStech

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Datasheet Details

Part number	MTB020N10RH8
Manufacturer	CYStech
File Size	811.02 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB020N10RH8-CYStech.pdf

MTB020N10RH8 Product details

Features

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 100V 21A 6.8A 20.4mΩ(typ) 25.1mΩ(typ) Symbol MTB020N10RH8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTB020N10RH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating an.

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Published: Mar 6, 2020 |