* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 100V 21A 6.8A 20.4mΩ(typ) 25.1mΩ(typ)
MTB020N10RH8 Datasheet (811.02 KB)
MTB020N10RH8
CYStech
811.02 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C053H8 Issued Date : 2019.08.29 Revised Date : Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
MTB02.
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