* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Repetitive Avalanche Rated
* Pb-free & Halogen-free package
* ESD protected gate BVDSS ID RDS(ON)@VGS=10V, ID=9A RDS(ON)@VGS=4.5V, ID=7A 30V 10.2A 12.8 mΩ(typ) 17.4 mΩ(t
MTB020N03KQ8 Datasheet (391.01 KB)
MTB020N03KQ8
Cystech Electonics
391.01 KB
N-channel enhancement mode mosfet.
CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB020N03KQ8 Spec. No. : C143Q8 Issued Date : 2015.11.13 Revised Date : Page No. : .
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