MTB020N10RE3 N-Channel Enhancement Mode Power MOSFET

CYStech

Description

CYStech Electronics Corp.Spec.No.: C053E3 Issued Date : 2019.08.29 Revised Date : Page No.: 1/ 8 N-Channel Enhancement Mode Power MOSFET MTB020N.

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Datasheet Specifications

Part number: MTB020N10RE3
Manufacturer: CYStech
File Size: 625.05 KB
Datasheet: MTB020N10RE3-CYStech.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=15A 100V 33A 6.6A 21.3mΩ(typ) 26.5 mΩ(typ) Symbol MTB020N10RE3

MTB020N10RE3 Distributors

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MTB020N10RE3 N-Channel Enhancement Mode Power MOSFET CYStech

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