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MTB020N10RE3 - N-Channel Enhancement Mode Power MOSFET

CYStech

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Datasheet Details

Part number	MTB020N10RE3
Manufacturer	CYStech
File Size	625.05 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB020N10RE3-CYStech.pdf

MTB020N10RE3 Product details

Features

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=15A 100V 33A 6.6A 21.3mΩ(typ) 26.5 mΩ(typ) Symbol MTB020N10RE3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device Package Shipping MTB020N10RE3-0-UB-X TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton.

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Published: Mar 6, 2020 |