* VGS=4V, ID=10A
* Low Gate Charge
* Simple Drive Requirement
* ESD Protected Gate
* Pb-free lead plating and halogen-free package 30V 30A 9A 13mΩ 18mΩ 21mΩ Equivalent Circuit MTB020N03KJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device Package
MTB020N03KJ3 Datasheet (484.83 KB)
MTB020N03KJ3
Cystech Electonics
484.83 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C143J3 Issued Date : 2015.12.15 Revised Date : 2016.02.22 Page No. : 1/9
N-Channel Enhancement Mode Power MOSF.
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