* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* ESD protected gate
* Pb-free lead plating and Halogen-free package RDS(ON)@VGS=4.5V, ID=6A RDS(ON)@VGS=4V, ID=4A 60V 42A 7.8A 12.2mΩ(typ) 15.6mΩ(typ) 1
MTB020N06KH8 Datasheet (473.87 KB)
MTB020N06KH8
Cystech Electonics
473.87 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C103H8 Issued Date : 2016.04.20 Revised Date : Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
MTB020.
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