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Cystech Electonics

MTB17A03Q8 Datasheet Preview

MTB17A03Q8 Datasheet

Dual N-Channel Logic Level Enhancement Mode MOSFET

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CYStech Electronics Corp.
Spec. No. : C729Q8
Issued Date : 2009.07.01
Revised Date : 2019.03.26
Page No. : 1/ 9
Dual N-Channel Enhancement Mode Power MOSFET
MTB17A03Q8
BVDSS
ID @ VGS=10V, TA=25 C
RDSON(TYP)
VGS=10V, ID=10A
VGS=4.5V, ID=6A
30V
10A
8.6mΩ
12.6mΩ
Description
The MTB17A03Q8 provides the designer with the best combination of fast switching, ruggedized device
design, ultra low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
RDS(ON)=15mΩ(max.)@VGS=10V, ID=10A
Simple drive requirement
Low on-resistance
Fast switching speed
Dual N-ch MOSFET package
Pb-free lead plating & halogen-free package
Equivalent Circuit
MTB17A03Q8
Outline
SOP-8
GGate SSource DDrain
MTB17A03Q8
CYStek Product Specification




Cystech Electonics

MTB17A03Q8 Datasheet Preview

MTB17A03Q8 Datasheet

Dual N-Channel Logic Level Enhancement Mode MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C729Q8
Issued Date : 2009.07.01
Revised Date : 2019.03.26
Page No. : 2/ 9
Ordering Information
Device
MTB17A03Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13reel
Product rank, zero for no rank products
Product name
Absolute Maximum Ratings (Ta=25C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS=10V, TA=25 C
Continuous Drain Current, VGS=10V, TA=70 C
Pulsed Drain Current (Note 1)
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=10A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
Power Dissipation
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
(Note 2)
(Note 3)
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj ; Tstg
Limits
30
±20
10
8.4
40
10
5
2.5
2.4
1.7
-55~+175
Unit
V
A
mJ
W
C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Rth,j-c
Rth,j-a
25
62.5 (Note 3)
C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle1%
3. Surface mounted on 1 in²copper pad of FR-4 board, 125C/W when mounted on minimum copper pad
MTB17A03Q8
CYStek Product Specification


Part Number MTB17A03Q8
Description Dual N-Channel Logic Level Enhancement Mode MOSFET
Maker Cystech Electonics
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